IEC 60749-27-2006 半导体器件.机械和气候试验方法.第27部分_静电放电(ESD)灵敏度测试.机器模型(MM).pdf

标准号：IEC 60749-27-2006
实施状态：现行
中文名称：半导体器件.机械和气候试验方法.第27部分:静电放电(ESD)灵敏度测试.机器模型(MM)
英文名称：Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge (ESD) sensitivity testing - Machine model (MM)
发布日期：2006-07
代替标准：IEC 47/1861/FDIS-2006;IEC 60749-27-2003
采用标准：DIN EN 60749-27-2007,IDT;BS EN 60749-27-2006,IDT;EN 60749-27-2006,IDT;NF C96-022-27-2006,IDT;OEVE/OENORM EN 60749-27-2007,IDTN-EN 60749-27-2006,IDTN-EN 60749-27-2008,IDT
起草单位：IEC/TC 47
标准简介：This part of IEC 60749 establishes a standard procedure for testing and classifying
semiconductor devices according to their susceptibility to damage or degradation by exposure
to a defined machine model (MM) electrostatic discharge (ESD). It may be used as an
alternative test method to the human body model ESD test method. The objective is to
provide reliable, repeatable ESD test results so that accurate classifications can be performed.
This test method is applicable to all semiconductor devices and is classified as destructive.
ESD testing of semiconductor devices is selected from this test method, the human body
model (HBM – see IEC 60749-26) or other test methods in the IEC 60749 series. The MM and
HBM test methods produce similar but not identical results. Unless otherwise specified, the
HBM test method is the one selected.
NOTE 1 This test method does not truly simulate discharge from real machines or metallic tools because the test
method uses high parasitic inductance of the test circuit, whereas real machines and metallic tools, whose
discharge rise time is approximately 100 ps, have no inductance.
NOTE 2 Certain clauses in this test method are in accordance with IEC 61340-3-2.
文件格式：PDF
文件大小：536.99KB
文件页数：34
（以上信息更新时间为：2019-11-25）



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