[国际电工委员会] IEC 60749-26-2006 半导体器件.机械和气候试验方法.第26部分:静电放电敏感性 (ESD)试验.人体模型(HBM)

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标准号:IEC 60749-26-2006
实施状态:作废
中文名称:半导体器件.机械和气候试验方法.第26部分:静电放电敏感性 (ESD)试验.人体模型(HBM)
英文名称:Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
发布日期:2006-07
被替代标准:IEC 60749-26-2013
代替标准:IEC 47/1859/FDIS-2006;IEC 60749-26-2003
采用标准:DIN EN 60749-26-2007,IDT;BS EN 60749-26-2006,IDT;EN 60749-26-2006,IDT;NF C96-022-26-2006,IDT;OEVE/OENORM EN 60749-26-2007,IDT;PN-EN 60749-26-2006,IDT;PN-EN 60749-26-2008,IDT
起草单位:IEC/TC 47
标准简介:This part of IEC 60749 establishes a standard procedure for testing and classifying
semiconductor devices according to their susceptibility to damage or degradation by exposure
to a defined human body model (HBM) electrostatic discharge (ESD). The objective is to
provide reliable, repeatable HBM ESD test results so that accurate classifications can be
performed.
This test method is applicable to all semiconductor devices and is classified as destructive.
ESD testing of semiconductor devices is selected from this test method, the machine model
(MM) test method (see IEC 60749-27) or other ESD test methods in the IEC 60749 series.
The HBM and MM test methods produce similar but not identical results; unless otherwise
specified, this test method is the one selected.
NOTE Certain clauses in this test method are in accordance with IEC 61340-3-1.
文件格式:PDF
文件大小:535.38KB
文件页数:36
(以上信息更新时间为:2019-11-25)

IEC 60749-26-2006 半导体器件.机械和气候试验方法.第26部分_静电放电敏感性 (ESD)试验.人体模型(HBM).pdf (535.38 KB)

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