标准号：ISO 14706-2000
实施状态：作废
中文名称：表面化学分析 用总反射X-射线荧光(TXRF)测定法测定硅晶片的表面基本的污染
英文名称：Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
发布日期：2000-12
被替代标准：ISO 14706-2014
代替标准：ISO/DIS 14706-1999
采用标准：BS ISO 14706-2001,IDT;JIS K 0148-2005,IDT
起草单位：ISO/TC 201
标准简介：This International Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces.
The method is applicable to:
— elements of atomic number from 16 (S) to 92 (U);
— contamination elements with atomic surface densities from 1 × 10<up10> atoms/cm<up2> to 1 × 10<up14> atoms/cm<up2>;
— contamination elements with atomic surface densities from 5 × 10<up8> atoms/cm<up2> to 5 × 10<up12> atoms/cm<up2> using a VPD (vapour-phase decomposition) specimen preparation method (see 3.4).
文件格式：PDF
文件大小：196.50KB
文件页数：30
（以上信息更新时间为：2019-11-23）
ISO 14706-2000 表面化学分析 用总反射X-射线荧光(TXRF)测定法测定硅晶片的表面基本的污染.pdf
(196.5 KB)
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